High accuracy current sensing for GaN power switching devices
US11831303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2021 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Jun 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0027
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
High accuracy current sense circuitry for power switching devices comprising GaN power transistors provides for current feedback functions, e.g. current loop control, over-current protection (OCP) and short-circuit protection (SCP). The current sense circuitry comprises a current mirror sense GaN transistor (Sense_GaN) and a power GaN transistor (Power_GaN) and a sampling circuit. The sampling circuit comprises first and second stage operational amplifiers to provide fast response and improved current sense accuracy, e.g. better than 1%, over a range of junction temperatures Tj. The Sense_GaN, Power_GaN and first stage operational amplifier have a common ground referenced to a Kelvin Source of the Power_GaN, so that the Sense_GaN and Power_GaN operate with the same gate-to-source voltage Vgs, to provide an accurate current ratio. Applications include current sensing for switching mode power supplies that need high speed and lossless current sense for current protection and feedback.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.