Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers
US11832521B2 · kind B2 · utility
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Key dates
| Filing date | Apr 17, 2020 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Sep 22, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49005
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.