Method and system of surface topography measurement for lithography
US11835866B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2022 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | Oct 31, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7011
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method includes: providing a workpiece to a semiconductor apparatus, the workpiece including a material layer, wherein the material layer includes a first strip having a first plurality of exposure fields configured to be exposed in a first direction and a second plurality of exposure fields configured to be exposed in a second direction different from the first direction; scanning the first strip along a first scan route in the first direction to generate first topography measurement data; scanning the first strip along a second scan route in the second direction to generate second topography measurement data; and exposing the first plurality of exposure fields according to the first topography measurement data and exposing the second plurality of exposure fields according to the second topography measurement data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.