Ti-Nb alloy sputtering target and production method thereof
US11837449B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Mar 23, 2017 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | Apr 10, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a Ti—Nb alloy sputtering target containing 0.1 to 30 at % of Nb, the remainder of Ti and unavoidable impurities; and the Ti—Nb alloy sputtering target is characterized by having an oxygen content of 400 wtppm or less. Since the target in the present disclosure has a favorable surface texture with a low oxygen content and is readily processable due to the low hardness of the target, the Ti—Nb alloy sputtering target yields a superior effect of being able to suppress the generation of particles during sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.