Group III nitride-based radio frequency amplifiers having back side source, gate and/or drain terminals
US11837559B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 24, 2021 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | May 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
RF amplifiers are provided that include an interconnection structure and a Group III nitride-based RF amplifier die that is mounted on top of the interconnection structure. The Group III nitride-based RF amplifier die includes a semiconductor layer structure. A plurality of unit cell transistors are provided in an upper portion of the semiconductor layer structure, and a gate terminal, a drain terminal and a source terminal are provided on a lower surface of the semiconductor layer structure that is adjacent the interconnection structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.