Image sensor including a protective layer
US11837618B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2020 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | Mar 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor includes a semiconductor substrate having a plurality of pixel regions arranged in a first direction and a second direction that are parallel to an upper surface of the semiconductor substrate. The first direction is perpendicular to the second direction. A grid structure extends in the first direction and the second direction on the semiconductor substrate to define openings corresponding to a plurality of sub-pixel regions of the plurality of the pixel regions, respectively. Color filters are disposed in the openings of the grid structure, respectively. A protective layer covers sidewalls of the grid structure and bottom surfaces of the color filters. The protective layer includes silicon oxide including carbon (C) or nitrogen (N).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.