Source/drain spacer with air gap in semiconductor devices and methods of fabricating the same
US11837631B2 · kind B2 · utility
0Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2021 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | Apr 30, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor structure includes a semiconductor fin protruding from a substrate, a dielectric fin disposed adjacent and substantially parallel to the semiconductor fin, an epitaxial source/drain (S/D) feature disposed in the semiconductor fin, a dielectric layer disposed between a sidewall of the epitaxial S/D feature and a sidewall of the dielectric fin, and an air gap disposed in the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.