Semiconductor structure
US11842927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2021 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Oct 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a substrate including a first region and a second region, a first channel layer disposed in the first region and a second channel layer disposed in the second region, a first dielectric layer disposed on the first channel layer and a second dielectric layer disposed on the second channel layer, and a first gate electrode disposed on the first dielectric layer and a second gate electrode disposed on the second dielectric layer. The first channel layer in the first region includes Ge compound of a first Ge concentration, the second channel layer in the second region includes Ge compound of a second Ge concentration. The first Ge concentration in the first channel layer is greater than the second Ge concentration in the second channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.