Semiconductor device and method of manufacturing the semiconductor device
US11843037B2 · kind B2 · utility
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4References
25Claims
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Key dates
| Filing date | Oct 7, 2021 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Nov 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
Abstract
Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, a channel layer at least one of on or in the substrate, an insulation layer on the substrate, a ferroelectric layer on the insulation layer, a fixed charge layer on an interface between the insulation layer and the ferroelectric layer, the fixed charge layer including charges of a first polarity, and a gate on the ferroelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.