Light emitting diodes with n-polarity and associated methods of manufacturing
US11843072B2 · kind B2 · utility
1Cited by
10References
20Claims
0Family size
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Key dates
| Filing date | Jun 28, 2021 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Nov 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.