Methods and apparatus for extended chamber for through silicon via deposition

US11846013B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David Gunther · Weingarten, DE
• Jiao Song · Singapore, SG
• Kirankumar Neelasandra SAVANDAIAH · Bengaluru, IN
• Irena H. Wysok · San Jose, US
• Anthony Chih-Tung Chan · Sunnyvale, US

Key dates

• Filing date: Jul 31, 2020
• Grant date: Dec 19, 2023
• Expiry date: Dec 1, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76843
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.