Non-volatile memory device including sense amplifier and method for operating the same
US11848061B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2022 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | May 11, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present disclosure relate to a non-volatile memory device including a sense amplifier and an operation method thereof. The non-volatile memory device may include: a memory cell array comprising a plurality of memory cells; and the sense amplifier configured to read data of the plurality of memory cells and output the read data. The sense amplifier may include: a first stage sense amplifier configured to sense a voltage difference between a reference voltage and a voltage of a bit line connected to at least one memory cell among the plurality of memory cells, and perform a primary amplification of the sensed voltage difference; and a second stage sense amplifier configured to perform a secondary amplification of a first result of the primary amplification and output a second result of the secondary amplification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.