Lateral micro-LED

US11848194B2 · kind B2 · utility

Assignee

• Meta Platforms Technologies, LLC · US

Inventors

• Alexander Tonkikh · Wenzenbach, DE
• Guillaume LHEUREUX · Cork, IE
• Markus Broell · Cork, IE
• Berthold Hahn · Hemau, DE

Key dates

• Filing date: May 13, 2021
• Grant date: Dec 19, 2023
• Expiry date: Jan 1, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/032

Abstract

A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.