Curved semiconductor and method of forming the same

US11848349B1 · kind B1 · utility

Assignee

• HRL Laboratories, LLC · US

Inventors

• Andrew C. Keefe · Calabasas, US
• Geoffrey P. McKnight · Los Angeles, US
• Alexander R. Gurga · Calabasas, US
• Ryan Freeman · Novato, US

Key dates

• Filing date: Apr 19, 2019
• Grant date: Dec 19, 2023
• Expiry date: Apr 19, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/80

Abstract

A method of forming a curved semiconductor includes: forming a device layer on a semiconductor substrate; forming a metal layer on the device layer; removing the semiconductor substrate from the device layer; and curving the device layer and the metal layer.