Semiconductor device and method of fabricating the same
US11848364B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2021 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Oct 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.