Semiconductor device and method of manufacturing the same
US11849586B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2022 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Oct 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A semiconductor device is provided, including: a substrate; a first stacked portion including a plurality of first electrode layers stacked in a first direction via a first insulator; a second stacked portion provided above the first stacked portion and including a plurality of second electrode layers stacked in the first direction via a second insulator; a connection portion provided between the first stacked portion and the second stacked portion, and including a third insulator; a column-shaped portion extending in the first stacked portion, the second stacked portion, and the connection portion in the first direction, and including a semiconductor body and a charge storage portion; and a semiconductor pillar provided between the substrate and the column-shaped portion, and in contact with the substrate and the semiconductor body of the column-shaped portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.