Hideto TAKEKIDA
33Patents
3h-index
20Co-inventors
59Inventor score
Filing activity: Mar 22, 2011 → Jul 12, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10475806B2 | Semiconductor memory device including stacked body with conductivity and insulating members and method for manufacturing the same | Electricity | 5 | Active |
| US8760935B2 | Nonvolatile semiconductor memory device | Physics | 4 | Active |
| US8427876B2 | Semiconductor storage device and control method thereof | Physics | 4 | Active |
| US8466506B2 | Nonvolatile semiconductor memory device and method of manufacturing the same | Electricity | 3 | Active |
| US10770117B1 | Semiconductor storage device | Physics | 3 | Active |
| US9653167B2 | Semiconductor memory device using grounded dummy bit lines | Electricity | 2 | Active |
| US10804290B2 | Semiconductor device and method of manufacturing the same | Electricity | 2 | Active |
| US8624317B2 | Nonvolatile semiconductor memory device and method for manufacturing same | Electricity | 2 | Active |
| US10763276B2 | Three dimensional semiconductor memory including pillars having joint portions between columnar sections | Physics | 1 | Active |
| US9830961B2 | Nonvolatile semiconductor storage device including a discharge transistor for discharging a bit line to a source line | Electricity | 1 | Active |
| US8952444B2 | Semiconductor storage device and manufacturing method thereof | Electricity | 1 | Active |
| US11895839B2 | Semiconductor storage device and method of manufacturing semiconductor storage device | Physics | 0 | Active |
| US11056501B2 | Three-dimensional NAND memory device with source line comprising metallic and semiconductor layers | Electricity | 0 | Active |
| US10957710B2 | Three dimensional semiconductor memory including pillars having joint portions between columnar sections | Physics | 0 | Active |
| US11502100B2 | Semiconductor device and method of manufacturing the same | Electricity | 0 | Active |
| US10109578B2 | Semiconductor memory device | Electricity | 0 | Active |
| US10950617B2 | Memory device with multiple layers | Electricity | 0 | Active |
| US10741580B2 | Semiconductor memory device | Electricity | 0 | Active |
| US10607935B2 | Memory device | Electricity | 0 | Active |
| US11744067B2 | Semiconductor memory device | Electricity | 0 | Active |
| US9837264B2 | Nonvolatile semiconductor memory device and method of manufacturing the same | Electricity | 0 | Active |
| US8994090B2 | Nonvolatile semiconductor storage device and method of manufacturing the same | Electricity | 0 | Active |
| US11386959B2 | Semiconductor storage device | Electricity | 0 | Active |
| US11849586B2 | Semiconductor device and method of manufacturing the same | Electricity | 0 | Active |
| US11094366B2 | Systems and methods to control semiconductor memory device in various timings | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.