Semiconductor device and method of forming the same
US11849588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2022 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Apr 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes forming an inter-metal dielectric layer over a substrate; forming a first conductive line embedded in the inter-metal dielectric layer; forming a dielectric structure over the inter-metal dielectric layer and the first conductive line; etching the dielectric structure until the first conductive line is exposed; forming a bottom electrode layer on the exposed first conductive line such that the bottom electrode layer has an U-shaped when viewed in a cross section; forming a ferroelectric layer over the bottom electrode layer; forming a top electrode layer over the ferroelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.