Method and system for monitoring deposition process
US11852467B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2020 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Jun 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.