Patent · US Active

MEMS motion sensor and method of manufacturing

US11852481B2 · kind B2 · utility

0Cited by
262References
51Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 13, 2015
Grant dateDec 26, 2023
Priority date
Expiry dateFeb 13, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01C25/00
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A MEMS motion sensor and its manufacturing method are provided. The sensor includes a MEMS wafer including a proof mass and flexible springs suspending the proof mass and enabling the proof mass to move relative to an outer frame along mutually orthogonal x, y and z axes. The sensor includes top and bottom cap wafers including top and bottom cap electrodes forming capacitors with the proof mass, the electrodes being configured to detect a motion of the proof mass. Electrical contacts are provided on the top cap wafer, some of which are connected to the respective top cap electrodes, while others are connected to the respective bottom cap electrodes by way of insulated conducting pathways, extending along the z axis from one of the respective bottom cap electrodes and upward successively through the bottom cap wafer, the outer frame of the MEMS wafer and the top cap wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.