Temperature sensor for non-volatile memory

US11852544B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Srikanth Machavolu · Papeton, US
• Sheshadri Sohani · Kodigehalli, IN
• Kapil Jain · Redwood City, US
• Alan D. DeVilbiss · Colorado Springs, US

Key dates

• Filing date: Mar 31, 2021
• Grant date: Dec 26, 2023
• Expiry date: Feb 10, 2042

Classification

• Technology area (CPC G): Physics
• CPC primary: G01K7/01
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Embodiments of the present disclosure provide a temperature sensor that may be integrated into a memory device along with a 1T1C reference voltage generator to enable the 1T1C reference voltage generator to provide a temperature dependent 1T1C reference voltage to a memory core (e.g., F-RAM memory core) of the memory device. The temperature sensor may detect a temperature of the memory core, and output this information (e.g., as a trim) for use by the 1T1C reference voltage generator in providing a temperature dependent 1T1C reference voltage. In this way, both the P-term and U-term margins of the memory core may be maintained even as a temperature of the memory core increases.