Electron beam lithography with dynamic fin overlay correction
US11852975B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Jul 8, 2020 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Aug 31, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54426
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electron beam lithography (Ebeam) method for a wafer having alignment and device layers with a design alignment. The Ebeam method includes executing an Ebeam scan of predefined length and resolution based on the design alignment over a pattern edge of the device layer, generating a signal from reflections of the Ebeam scan off the pattern edge, determining an offset of the device layer relative to the alignment layer from a comparison of the signal and the design alignment and applying the offset to the design alignment to obtain an actual measurement of Ebeam alignment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.