Patent · US Active

Intelligent management of ferroelectric memory in a data storage device

US11853213B2 · kind B2 · utility

0Cited by
7References
20Claims
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Assignee

Inventors

Key dates

Filing dateApr 27, 2022
Grant dateDec 26, 2023
Priority date
Expiry dateJun 11, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2212/7201
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Method and apparatus for managing a front-end cache formed of ferroelectric memory element (FME) cells. Prior to storage of writeback data associated with a pending write command from a client device, an intelligent cache manager circuit forwards a first status value indicative that sufficient capacity is available in the front-end cache for the writeback data. Non-requested speculative readback data previously transferred to the front-end cache from the main NVM memory store may be jettisoned to accommodate the writeback data. A second status value may be supplied to the client device if insufficient capacity is available to store the writeback data in the front-end cache, and a different, non-FME based cache may be used in such case. Mode select inputs can be supplied by the client device specify a particular quality of service level for the front-end cache, enabling selection of suitable writeback and speculative readback data processing strategies.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.