Patent · US Active

Method for producing SiGe-based zones at different concentrations of Ge

US11854805B2 · kind B2 · utility

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3References

13Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Joël KANYANDEKWE · Grenoble, FR
Cyrille Le Royer · Grenoble, FR

Key dates

Filing date	Jan 26, 2022
Grant date	Dec 26, 2023
Priority date	—
Expiry date	Apr 7, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/0142
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming SiGe-based regions with different Ge concentrations is provided. After defining the regions 1, 2 on a SOI substrate, a grating of masking patterns is formed on at least one region 2. After the epitaxial growth of a Ge-based layer in each of the regions, a first vertical diffusion is carried out. A second horizontal diffusion is then carried out such that the Ge diffuses beneath the masking patterns of the region 2. Thus, the region 2 has a Ge concentration that is lower than the Ge concentration of the region 1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.