Inventor · Grenoble, FR

Cyrille Le Royer

21Patents
3h-index
22Co-inventors
59Inventor score

Filing activity: Dec 1, 2006 → Oct 14, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US9117805B2 Air-spacer MOS transistor Electricity 12 Active
US9502558B2 Local strain generation in an SOI substrate Electricity 4 Active
US7759175B2 Fabrication method of a mixed substrate and use of the substrate for producing circuits Electricity 3 Active
US8581310B2 Z2FET field-effect transistor with a vertical subthreshold slope and with no impact ionization Electricity 3 Active
US7732282B2 Transistor of the I-MOS type comprising two independent gates and method of using such a transistor Electricity 3 Active
US9099555B2 Tunnel field effect transistor Electricity 3 Active
US8634229B2 Dynamic memory cell provided with a field-effect transistor having zero swing Electricity 2 Active
US9252269B2 Tunnel effect transistor Electricity 2 Active
US11217446B2 Method for fabricating an integrated circuit including a NMOS transistor and a PMOS transistor Electricity 1 Active
US9276102B2 Tunnel transistor with high current by bipolar amplification Electricity 1 Active
US9911820B2 Method for fabrication of a field-effect with reduced stray capacitance Electricity 1 Active
US11941485B2 Method of making a quantum device Physics 0 Active
US11854805B2 Method for producing SiGe-based zones at different concentrations of Ge Electricity 0 Active
US11121043B2 Fabrication of transistors having stressed channels Electricity 0 Active
US12389644B2 Method for manufacturing a transistor with a gate-all-around structure Electricity 0 Active
US12408405B2 Device comprising spacers including a localised airgap and associated manufacturing methods Electricity 0 Active
US11362181B2 Method for manufacturing an electronic component having multiple quantum dots Electricity 0 Active
US11387147B2 Method for producing a component by filling a cavity within an electrical isolation area with carbon-based material Electricity 0 Active
US11515148B2 Method for producing at least one device in compressive strained semiconductor Electricity 0 Active
US8822332B2 Method for forming gate, source, and drain contacts on a MOS transistor Electricity 0 Active
US11081399B2 Method of producing microelectronic components Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.