Low temperature deposition of pure molybenum films
US11854813B2 · kind B2 · utility
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Key dates
| Filing date | Feb 24, 2021 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Apr 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.