Substrate dicing method, method of fabricating semiconductor device, and semiconductor chip fabricated by them
US11854892B2 · kind B2 · utility
0Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2022 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Mar 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68336
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to an embodiment of inventive concepts, a substrate dicing method may include forming reformed patterns in a substrate using a laser beam, grinding a bottom surface of the substrate to thin the substrate, and expanding the substrate to divide the substrate into a plurality of semiconductor chips. The forming of the reformed patterns may include forming a first reformed pattern in the substrate and providing an edge focused beam to a region crossing the first reformed pattern to form a second reformed pattern in contact with the first reformed pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.