Wrap-around contact on FinFET

US11854898B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Sung-Li Wang · Zhubeikou, TW
• Neng-Kuo Chen · Hsinchu, TW
• Ding-Kang Shih · New Taipei, TW
• Meng-Chun Chang · Taipei, TW
• Yi-An Lin · Taichung, TW
• Gin-Chen Huang · New Taipei, TW
• Chen-Feng Hsu · Hsinchu, TW
• Hau-Yu Lin
• Chih-Hsin Ko · Fongshan, TW
• Sey-Ping Sun · Austin, US
• Clement Hsingjen Wann · Carmel, US

Key dates

• Filing date: May 17, 2021
• Grant date: Dec 26, 2023
• Expiry date: Sep 14, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.