Semiconductor device
US11855095B2 · kind B2 · utility
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20Claims
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Assignee
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Key dates
| Filing date | Mar 29, 2022 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Mar 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate and a first dielectric layer. The semiconductor substrate includes at least one fin. The first dielectric layer is disposed on the at least one fin. A thickness of the first dielectric layer located on a top surface of the at least one fin is greater than a thickness of the first dielectric layer located on a sidewall of the at least one fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.