Methods of manufacturing acoustic wave device with anti-reflection layer
US11855603B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 31, 2022 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Mar 31, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/725
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Methods of manufacturing an acoustic wave device are disclosed. An anti-reflection layer can be formed over a conductive layer that is over a piezoelectric layer. The conductive layer can include aluminum, for example. The anti-reflection layer can remain distinct from the conductive layer after a heating process. A photolithography process can pattern an interdigital transducer of the acoustic wave device from one or more interdigital transducer electrode layers that include the conductive layer. The anti-reflection layer can reduce reflection from the conductive layer during the photolithography process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.