Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films
US11856858B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Aug 2, 2019 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Nov 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/023
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a piezoelectric film can include providing a wafer in a CVD reaction chamber and forming an aluminum nitride material on the wafer, the aluminum nitride material doped with a first element E1 selected from group IIA or from group IIB and doped with a second element E2 selected from group IVB to provide the aluminum nitride material comprising a crystallinity of less than about 1.5 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.