High-density resistive random-access memory array with self-aligned bottom electrode contact

US11856878B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Dexin Kong · Guilderland, US
• Ekmini Anuja De Silva · Slingerlands, US
• Ashim Dutta · Clifton Park, US
• Daniel Schmidt · Niskayuna, US

Key dates

• Filing date: Nov 6, 2021
• Grant date: Dec 26, 2023
• Expiry date: Aug 5, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A high-density resistive random-access memory array with self-aligned bottom electrode contact includes a plurality of electrically conductive structures embedded in an interconnect dielectric material layer, a bottom electrode selectively grown over, and electrically connected to, each of the electrically conductive structures with the bottom electrode above an electrically conductive structure being separated from the bottom electrode above another electrically conductive structure by a first dielectric filling layer, the bottom electrode having a semi-circular shape. The array further includes a resistive random-access memory pillar disposed above the bottom electrode.