Heteroalkylcyclopentadienyl indium-containing precursors and processes of using the same for deposition of indium-containing layers

US11859283B2 · kind B2 · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Antoine Bruneau · Eu, FR
• Takashi Ono · Toride, JP
• Christian Dussarrat · Tokyo, JP

Key dates

• Filing date: Jul 28, 2020
• Grant date: Jan 2, 2024
• Expiry date: Mar 14, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods for forming an Indium-containing film by a vapor deposition method using a heteroalkylcyclopentadienyl Indium (I) precursor having a general formula: In[R1R2R3R4CpL1] orIn[CpL1L2y] wherein Cp represents a cyclopentadienyl ligand; R1 to R4 are each independently H, C1-C4 linear, branched or cyclic alkyls; L1 and L2 are each independently a substituent bonded to the Cp ligand and consisting of an alkyl chain containing at least one heteroatom, such as Si, Ge, Sn, N, P, B, Al, Ga, In, O, S, Se, Te, F, Cl, Br, I; and y=1-4. Examplary heteroalkylcyclopentadienyl Indium (I) precursors include In(Cp(CH2)3NMe2) or In(CpPiPr2).