Inventor · Tokyo, JP

Christian Dussarrat

89Patents
12h-index
58Co-inventors
83Inventor score

Filing activity: Nov 27, 2002 → Sep 30, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US8668957B2 Method of forming dielectric films, new precursors and their use in semiconductor manufacturing Electricity 518 Active
US8227032B2 Method of forming silicon oxide containing films Electricity 453 Active
US7192626B2 Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition Electricity 75 Expired
US7019159B2 Hexakis(monohydrocarbylamino) disilanes and method for the preparation thereof Chemistry; Metallurgy 53 Expired
US7482286B2 Method for forming dielectric or metallic films Emerging Cross-Sectional Technologies 34 Expired
US6936548B2 Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition Chemistry; Metallurgy 30 Expired
US7064083B2 Hexakis(monohydrocarbylamino)disilanes and method for the preparation thereof Chemistry; Metallurgy 26 Expired
US9371338B2 Organosilane precursors for ALD/CVD silicon-containing film applications Electricity 20 Active
US8357430B2 Method for producing silicon nitride films Electricity 18 Active
US8853075B2 Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process Electricity 14 Active
US8399056B2 Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing Electricity 12 Active
US9911590B2 Methods of forming dielectric films, new precursors and their use in semiconductor manufacturing Electricity 12 Active
US9514959B2 Fluorocarbon molecules for high aspect ratio oxide etch Chemistry; Metallurgy 12 Active
US10094021B2 Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films Chemistry; Metallurgy 11 Active
US8470402B2 Method of depositing a metal-containing dielectric film Electricity 9 Active
US8454928B2 Tellurium precursors for GST deposition Electricity 9 Active
US8283201B2 Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films Chemistry; Metallurgy 8 Active
US8092721B2 Deposition of ternary oxide films containing ruthenium and alkali earth metals Chemistry; Metallurgy 7 Active
US8153832B2 Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof Chemistry; Metallurgy 6 Active
US8377511B2 Method for depositing silicon nitride films and/or silicon oxynitride films by chemical vapor deposition Chemistry; Metallurgy 5 Active
US7972975B2 Method for forming a dielectric film and novel precursors for implementing said method Electricity 5 Active
US7951711B2 Metal precursors for semiconductor applications Chemistry; Metallurgy 5 Active
US8617649B2 Cyclopentadienyl transition metal precursors for deposition of transition metal-containing films Chemistry; Metallurgy 4 Active
US7544389B2 Precursor for film formation and method for forming ruthenium-containing film Electricity 4 Expired
US8404878B2 Titanium-containing precursors for vapor deposition Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.