Mask defect prevention
US11860530B2 · kind B2 · utility
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1References
20Claims
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Key dates
| Filing date | Jun 30, 2022 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Jun 30, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.