Patent · US Active

Wafer and method of manufacturing wafer

US11862685B2 · kind B2 · utility

0Cited by
2References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 4, 2022
Grant dateJan 2, 2024
Priority date
Expiry dateSep 3, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/12
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.