Split gate power MOSFET and split gate power MOSFET manufacturing method
US11862695B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 17, 2021 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Apr 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A split gate MOSFET is provided. The split gate MOSFET may have a low capacitance between a gate electrode and a source electrode. The trench MOSFET includes a substrate; a gate trench formed on the substrate; a sidewall insulating layer formed on a sidewall of the gate trench; a source electrode surrounded by the sidewall insulating layer; a first upper electrode provided above the source electrode; a first inter-electrode insulating layer formed between the source electrode and the first upper electrode; a second upper electrode formed adjacent to a side of the first upper electrode and surrounding the first upper electrode; and an interlayer insulating layer formed on the first upper electrode and the second upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.