Group III nitride-based radio frequency transistor amplifiers having source, gate and/or drain conductive vias
US11863130B2 · kind B2 · utility
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24Claims
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Key dates
| Filing date | Mar 29, 2021 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Aug 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.