SiC substrate and SiC epitaxial wafer
US11866846B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2023 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | May 2, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/20
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a SiC substrate of the present invention, in a case where a point 10 mm inside from an outer peripheral edge in a [11-20] direction from a center is defined as a first outer peripheral point and any point within a circle having a diameter of 10 mm from the center is defined as a first center point, the tensile stress of the first outer peripheral point in a <1-100> direction, which is a circumferential direction of the first outer peripheral point, is larger than the tensile stress of the first center point in the <1-100> direction, which is the same direction as the circumferential direction of the first outer peripheral point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.