Patent · US Active

Data storage with multi-level read destructive memory

US11868621B2 · kind B2 · utility

0Cited by

10References

20Claims

0Family size

Assignee

Seagate Technology LLC · US

Inventors

Jon D. Trantham · Chanhassen, US
Praveen Viraraghavan · Chicago, US
John W. Dykes · Eden Prairie, US
Ian J. Gilbert · Chanhassen, US
Sangita Shreedharan Kalarickal · Eden Prairie, US
Matthew J. Totin · Excelsior, US
Mohamad El-Batal · Westminster, US
Darshana H. Mehta · Shakopee, US

Key dates

Filing date	Jun 20, 2022
Grant date	Jan 9, 2024
Priority date	—
Expiry date	Jul 1, 2042

Classification

Technology area (CPC G)Physics
CPC primaryG11C2029/1206
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A data storage system can employ a read destructive memory configured with multiple levels. A non-volatile memory unit can be programmed with a first logical state in response to a first write voltage of a first hysteresis loop by a write controller prior to being programmed to a second logical state in response to a second write voltage of the first hysteresis loop, as directed by the write controller. The first and second logical states may be present concurrently in the non-volatile memory unit and subsequently read concurrently as the first logical state and the second logical state.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.