Integrated sensor for lifetime characterization

US11869917B2 · kind B2 · utility

Assignee

• Quantum-Si Incorporated · US

Inventors

• Eric A. G. Webster · Mountain View, US
• Changhoon Choi · Palo Alto, US
• Dajiang Yang · San Jose, US
• Xin Wang · San Jose, US
• Todd Rearick · Cheshire, US
• Kyle Preston · Guilford, US
• Ali Kabiri · Guilford, US
• Gerard Schmid · Guilford, US

Key dates

• Filing date: Jan 14, 2021
• Grant date: Jan 9, 2024
• Expiry date: Jan 14, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

Aspects of the technology described herein relate to improved semiconductor-based image sensor designs. In some embodiments, an integrated circuit may comprise a photodetection region and a drain region electrically coupled to the photodetection region, and the photodetection region may be configured to induce an intrinsic electric field in a direction from the photodetection region to the drain region(s). In some embodiments, a charge storage region and the drain region may be positioned on a same side of the photodetection region. In some embodiments, at least one drain layer may be configured to receive incident photons and/or charge carriers via the photodetection region. In some embodiments, an integrated circuit may comprise a plurality of pixels and a control circuit configured to control a transfer of charge carriers in the plurality of pixels.