In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes
US11869922B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2022 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Jul 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
LED apparatuses and corresponding manufacturing techniques are described. In some examples, an LED apparatus includes a mesa etched from a layered epitaxial structure. The layered epitaxial structure includes a quantum well layer and a barrier layer adjacent to the quantum well layer. The barrier layer overhangs the quantum well layer as a result of the quantum well layer having been etched to a greater depth compared to the barrier layer. In some examples, the quantum well layer and the barrier layer are etched together to produce an area where the barrier layer overhangs the quantum well layer. Etching of the quantum well layer and the barrier layer can be performed after the layered epitaxial structure has been etched to form the mesa, in order to reduce surface imperfections leftover from the mesa etch. In some examples, one or more regrowth semiconductor layers are formed over etched facets of the mesa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.