High-k capacitor dielectric having a metal oxide area comprising boron, electrical device, and semiconductor apparatus including the same
US11869926B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2021 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Jan 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a lower electrode, an upper electrode isolated from direct contact with the lower electrode, and a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising a first metal oxide area, a second metal oxide area, and a third metal oxide area. The third metal oxide area is between the first metal oxide area and the second metal oxide area, and includes boron and one or more metal elements selected from aluminum (Al), magnesium (Mg), silicon (Si), or beryllium (Be). In the third metal oxide area, a content of boron (B) is less than or equal to a content of the metal elements of Al, Mg, Si, and/or Be.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.