Narae HAN
7Patents
1h-index
11Co-inventors
40Inventor score
Filing activity: May 24, 2019 → Nov 17, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12071690B2 | Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the same | Electricity | 1 | Active |
| US11194153B2 | Phase shift device including metal-dielectric composite structure | Physics | 1 | Active |
| US11869926B2 | High-k capacitor dielectric having a metal oxide area comprising boron, electrical device, and semiconductor apparatus including the same | Electricity | 0 | Active |
| US12408353B2 | Device with dielectric metal oxide layers and semiconductor apparatus including the same | Electricity | 0 | Active |
| US12414313B2 | High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same | Electricity | 0 | Active |
| US11693237B2 | Phase shift device including metal-dielectric composite structure | Physics | 0 | Active |
| US12356640B2 | High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same | General | 0 | Revoked |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.