Feeder design with high current capability

US11869940B2 · kind B2 · utility

Assignee

• II-VI DELAWARE, INC. · US

Inventors

• Hossein Elahipanah · Sollentuna, SE
• Nicolas Thierry-Jebali · Stockholm, SE
• Adolf Schöner · Hässelby, SE
• Sergey Reshanov · Upplands Väsby, SE

Key dates

• Filing date: Jan 5, 2023
• Grant date: Jan 9, 2024
• Expiry date: Jan 5, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A feeder design is manufactured as a structure in a SiC semiconductor material comprising at least two p-type grids in an n-type SiC material (3), comprising at least one epitaxially grown p-type region, wherein an Ohmic contact is applied on the at least one epitaxially grown p-type region, wherein an epitaxially grown n-type layer is applied on at least a part of the at least two p-type grids and the n-type SiC material (3) wherein the at least two p-type grids (4, 5) are applied in at least a first and a second regions at least close to the at least first and second corners respectively and that there is a region in the n-type SiC material (3) between the first and a second regions without any grids.