Heteroepitaxial wafer and method for producing a heteroepitaxial wafer

US11869942B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Sarad Bahadur Thapa · Burghausen, DE
• Martin Vorderwestner · Unterreit, DE

Key dates

• Filing date: Aug 16, 2018
• Grant date: Jan 9, 2024
• Expiry date: Dec 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A heteroepitaxial wafer comprises, in the following order: a silicon substrate having a diameter and a thickness;