Scalable MPS device based on SiC
US11869944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2021 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Apr 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
Merged-PiN-Schottky, MPS, device comprising: a substrate of SiC with a first conductivity; a drift layer of SiC with the first conductivity, on the substrate; an implanted region with a second conductivity, extending at a top surface of the drift layer to form a junction-barrier, JB, diode with the substrate; and a first electrical terminal in ohmic contact with the implanted region and in direct contact with the top surface to form a Schottky diode with the drift layer. The JB diode and the Schottky diode are alternated to each other along an axis: the JB diode has a minimum width parallel to the axis with a first value, and the Schottky diode has a maximum width parallel to the axis with a second value smaller than, or equal to, the first value. A breakdown voltage of the MPS device is greater than, or equal to, 115% of a maximum working voltage of the MPS device in an inhibition state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.