Antenna apparatus and fabrication method

US11870130B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Eung San Cho · Torrance, US
• Ashutosh Baheti · Munich, DE
• Saverio Trotta · Hersbruck, DE

Key dates

• Filing date: Jul 27, 2020
• Grant date: Jan 9, 2024
• Expiry date: Dec 25, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/18
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor die comprising a radio frequency (RF) circuit, a first dielectric layer disposed over a first surface of the semiconductor die, an antenna layer disposed over a surface of the first dielectric layer, and an antenna feeding structure coupling the antenna layer to the RF circuit of the semiconductor die, wherein the semiconductor die comprises a via, and the antenna feeding structure comprises a first portion arranged within the opening of the semiconductor die and extending to the first surface of the semiconductor die, and a second portion arranged through the first dielectric layer.