Semiconductor laser and method of production for optoelectronic semiconductor parts

US11870214B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Jörg Erich Sorg · Regensburg, DE
• Harald König · Bernhardswald, DE
• Alfred Lell · Maxhütte-Haidhof, DE
• Florian Peskoller · Ingolstadt, DE
• Karsten Auen · Regensburg, DE
• Roland Schulz · Portland, US
• Herbert Brunner · Sinzing, DE
• Frank Singer · Regenstauf, DE
• Roland Hüttinger · Kaufering, DE

Key dates

• Filing date: Oct 21, 2022
• Grant date: Jan 9, 2024
• Expiry date: Oct 21, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/0267
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.