Patent · US Active

Multi-level RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system

US11874234B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 23, 2023
Grant dateJan 16, 2024
Priority date
Expiry dateJan 23, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R27/32
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Methods and systems for RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system are provided. A radio frequency (RF) signal is pulsed within a processing chamber in accordance with a set of process parameters. Sensor data is received from one or more sensors that indicates a RF pulse waveform detected within the processing chamber. One or more RF signal characteristics are identified in the detected RF pulse waveform. Each identified RF signal characteristic corresponds to at least one RF signal pulse of the RF signal pulsing within the processing chamber. A determination is made, based on the identified one or more RF signal characteristics, whether the detected RF pulse waveform corresponds to the target RF pulse waveform. An indication of whether the detected RF pulse waveform corresponds to the target RF pulse waveform is provided to a client device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.